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| AP6679GI Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Lower On-resistance RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -48A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. GD S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 25 -48 -30 300 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 62 Units /W /W Data and specifications subject to change without notice 200525051-1/4 AP6679GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 43 40 8 28 15 75 50 90 930 690 2.7 Max. Units 9 15 -3 -1 -25 100 67 4 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-30A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25 ID=-30A VDS=-25V VGS=-4.5V VDS=-15V ID=-30A RG=3.3,VGS=-10V RD=0.5 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 3100 4590 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-30A, VGS=0V IS=-24A, VGS=0V, dI/dt=-100A/s Min. - Typ. 47 45 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP6679GI 280 150 T C =25 o C -ID , Drain Current (A) 210 -10V -8.0V -ID , Drain Current (A) -6.0V 100 T C =150 o C -10V -8.0V -6.0V -4.5V 140 -4.5V 50 70 V G =-3.0V V G =-3.0V 0 0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 35 1.8 I D = -24A T C =25 Normalized RDS(ON) RDS(ON) (m ) 25 I D =-30A V G =-10V 1.4 15 1.0 5 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 20 Normalized -VGS(th) (V) 1.4 1.2 -IS(A) T j =150 o C T j =25 o C 10 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP6679GI 16 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -30A V DS = -25V 12 C iss C (pF) 8 1000 C oss C rss 4 0 0 20 40 60 80 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 100us -ID (A) 1ms 10 0.1 0.1 0.05 PDM 10ms o T C =25 C Single Pulse t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 100ms DC 0.01 1 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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